Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM)
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چکیده
منابع مشابه
A New Lateral Conductive Bridge Random Access Memory (L-CBRAM) by Fully CMOS Logic Compatible Process
A novel fully-logic compatible Lateral CBRAM has been demonstrated by a sidewall Ti-atomic switch between poly-Si and a CMOS logic regular contact plug, the lateral Ti-based sandwich CBRAM structure can be well turned on or off at 1mA/1.5V by bipolar switching operations. More than 5X On/Off resistance ratio is successfully achieved after more than 1,000 pulse cycles, and it also has very stabl...
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It is known that conductive-bridge resistive-random-access-memory (CBRAM) device is very important for future high-density nonvolatile memory as well as logic application. Even though the CBRAM devices using different materials, structures, and switching performance have been reported in Nanoscale Res. Lett., 2015, however, optical switching characteristics by using thermally grown Ge0.2Se0.8 f...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2016
ISSN: 2158-3226
DOI: 10.1063/1.4941752